DocumentCode
629191
Title
3 dimensional scaling extensibility on epitaxial source drain strain technology toward Fin FET and beyond
Author
Maeda, Shigenobu ; Ko, Y. ; Jeong, Joonsoo ; Fukutome, H. ; Kim, Marn-Go ; Kim, Sungho ; Choi, Jang-Young ; Shin, Donghoon ; Oh, Yisok ; Lim, Wilton ; Lee, Kahyun
Author_Institution
Syst. LSI Div., Samsung Electron., Yongin, South Korea
fYear
2013
fDate
11-13 June 2013
Abstract
3 dimensional (3D) scaling extensibility on epitaxial source drain strain technology toward Fin FET and beyond was discussed in terms of performance, uniformity and reliability. Horizontal sigma shape for the epitaxial strain technology is an attractive alternative for Fin FET and beyond. Its structural and electrical superiority was demonstrated.
Keywords
MOSFET; semiconductor device reliability; 3 dimensional scaling extensibility; 3D scaling extensibility; Fin FET; electrical superiority; epitaxial source drain strain technology; epitaxial strain technology; horizontal sigma shape; reliability; structural superiority; Epitaxial growth; Field effect transistors; Reliability; Shape; Strain; Stress; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location
Kyoto
ISSN
0743-1562
Print_ISBN
978-1-4673-5226-0
Type
conf
Filename
6576690
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