• DocumentCode
    63150
  • Title

    Soft-error protection of TCAMs based on ECCs and asymmetric SRAM cells

  • Author

    Gherman, V. ; Cartron, M.

  • Author_Institution
    LIST, CEA, Gif-sur Yvette, France
  • Volume
    50
  • Issue
    24
  • fYear
    2014
  • fDate
    11 20 2014
  • Firstpage
    1823
  • Lastpage
    1824
  • Abstract
    Content-addressable memories (CAMs) enable the comparison of their entire content to a search word in one single access. Ternary CAMs (TCAMs) provide the possibility to store and handle not only 0 s and 1 s but also don´t cares. A way to protect TCAMs implemented with static random-access memory (SRAM) cells against soft-errors is proposed. Asymmetric SRAM cells are used to reduce the probability that soft-errors (a) affect don´t cares and (b) corrupt 0 s and 1 s into anything else than a don´t care. This implies that soft-errors will only have the tendency to generate false-hits that point to an erroneous matching word. Such a failure can be mitigated with the help of an error-correcting code (ECC), as is the case with conventional memories. Other types of failures which are more difficult to detect and locate, i.e. false-misses or false-hits that point to an error-free matching word or false-misses, become very rare or non-existent.
  • Keywords
    SRAM chips; content-addressable storage; error correction codes; ECC; TCAM; asymmetric SRAM cells; error-correcting code; error-free matching word; false-hits; false-misses; search word; soft-error protection; static random-access memory cells; ternary content-addressable memories;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2014.2540
  • Filename
    6969283