III–V on Si components for packet switching

Author

Morthier, Geert ; Tassaert, M. ; Mechet, Pauline ; Raz, Oded ; Dorren, Harm ; Van Thourhout, Dries ; Roelkens, Gunther

Author_Institution

Dept. of Inf. Technol., Ghent Univ. - imec, Ghent, Belgium

fYear

2013

fDate

June 30 2013-July 4 2013

Firstpage

1

Lastpage

2

Abstract

We discuss the use of active and passive InP membrane structures, heterogeneously integrated onto SOI passive circuits, for switching applications such as gating, wavelength conversion and all-optical flip-flopping. Devices include microdisk lasers and resonators, as well as travelling wave structures, in either electrically pumped or unpumped configuration. We also pay some attention to the fabrication aspects.

Keywords

III-V semiconductors; indium compounds; laser cavity resonators; membranes; microdisc lasers; optical communication equipment; optical fabrication; optical pumping; optical wavelength conversion; packet switching; silicon-on-insulator; InP; SOI passive circuits; Si; active indium phosphide membrane structures; all-optical flip-flopping; gating; microdisk lasers; packet switching; passive indium phosphide membrane structures; resonators; travelling wave structures; wavelength conversion; Bonding; Indium phosphide; Optical pumping; Optical resonators; Optical switches; Optical waveguides; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching (OECC/PS), 2013 18th

Conference_Location

Kyoto

Type

conf

Filename

6597406