Low frequency noise in polycrystalline p-β-FeSi2/Ge heterojunction solar cells

Author

Bag, A. ; Mukherjee, Chhandak ; Mallik, S. ; Maiti, C.K.

Author_Institution

Dept. of Electron. & ECE, Indian Inst. of Technol., Kharagpur, Kharagpur, India

fYear

2013

fDate

15-19 July 2013

Firstpage

377

Lastpage

380

Abstract

Low-frequency noise characterization of ITO/p-β-FeSi₂(Al)/Al/n-Ge(100) heterojunction solar cells is reported. 1/f noise and stress-induced degradation studies are used for the reliability analyses of solar cells. The nature of the burst noise generated from the defects in the p-n junction space-charge region of the solar cell and their bias dependence have been studied in detail. Use of low-frequency noise is shown to be a non-destructive reliability characterization tool for solar cells.

Keywords

1/f noise; indium compounds; p-n heterojunctions; semiconductor device reliability; solar cells; tin compounds; 1/f noise; FeSi₂-Ge; ITO; bias dependence; burst noise; low frequency noise; low-frequency noise characterization; nondestructive reliability characterization tool; p-n junction space-charge region; polycrystalline heterojunction solar cells; reliability analyses; stress-induced degradation study; Indium tin oxide; Low-frequency noise; Noise measurement; Photovoltaic cells; Reliability; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the

Conference_Location

Suzhou

ISSN

1946-1542

Print_ISBN

978-1-4799-1241-4

Type

conf

DOI

10.1109/IPFA.2013.6599185

Filename

6599185