• DocumentCode
    633878
  • Title

    Dopant profiling using various FA techniques

  • Author

    Lim Chan Way ; Lim Siew Ping ; Lim Saw Sing

  • Author_Institution
    Infineon Technol. (Kulim) Sdn Bhd, Kedah Darul Aman, Malaysia
  • fYear
    2013
  • fDate
    15-19 July 2013
  • Firstpage
    460
  • Lastpage
    463
  • Abstract
    The paper outlines the applications of various FA techniques to identify any abnormality related to implantation. Such analysis is made possible through doping difference in semiconductors that produce observable image contrast. Method utilized includes SEM dopant contrast and wet stain method.
  • Keywords
    doping profiles; failure analysis; ion implantation; scanning electron microscopy; semiconductor device reliability; semiconductor doping; FA technique; SEM dopant contrast; device failure analysis; dopant profiling; doping difference; implantation abnormality; wet stain method; Decision support systems; Failure analysis; Integrated circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
  • Conference_Location
    Suzhou
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4799-1241-4
  • Type

    conf

  • DOI
    10.1109/IPFA.2013.6599200
  • Filename
    6599200
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=633878