DocumentCode
633891
Title
Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM
Author
Sun, Jian ; Wu, Xiaojie ; Liu, Quanwei ; Liu, Minggang ; Sun, L.T.
Author_Institution
SEU-FEI Nano-Pico Center, Southeast Univ., Nanjing, China
fYear
2013
fDate
15-19 July 2013
Firstpage
560
Lastpage
562
Abstract
In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the ZrO2-based device. Using in-situ transmission electron microscopy, we observe in real time that multiple conductive filaments (CFs) are formed across the ZrO2 layer between top electrode and bottom electrodes after forming. Various top electrode materials have been used, such as Cu, Ag, and Ni. Contrary to common belief, it is found that CF growth begins at the anode, rather than having to reach the cathode and grow backwards. Energy-dispersive X-ray spectroscopy results confirm that metal from the top electrode is the main composition of the CFs.
Keywords
X-ray chemical analysis; copper; electrochemical electrodes; nickel; random-access storage; silver; transmission electron microscopy; zirconium compounds; Ag; Cu; Ni; RRAM; ZrO2; bottom electrodes; energy-dispersive X-ray spectroscopy; in-situ TEM; nanoscale multiple conductive filaments; physical mechanism; real time observation; resistive switching characteristics; top electrode; transmission electron microscopy; Decision support systems; Failure analysis; Integrated circuits; Metals; Switches; Transmission electron microscopy; Transmission electron microscopy (TEM); conductive filaments; in-situ; resistive random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599223
Filename
6599223
Link To Document