Study of process influences on the break down limit of high voltage transistors in an embedded EEPROM CMOS technology by using EMMI and nanoprobing

Author

Acovic, Alexandre ; Dreybrodt, Joerg

Author_Institution

EM Microelectron. Marin SA, Marin, Switzerland

fYear

2013

fDate

15-19 July 2013

Firstpage

620

Lastpage

623

Abstract

High voltage transistors (HV) are key devices to achieve the required high programming voltages in charge pumps and HV interfaces of EEPROM memory cells used for RFID applications. The combined use of EMMI, nanoprobing and wafer in-line monitoring on test structures was used to investigate the limits of low Breakdown (BD) voltages of these transistors in an embedded EEPROM CMOS 0.35μm technology.

Keywords

CMOS memory circuits; EPROM; charge pump circuits; power transistors; radiofrequency identification; BD voltage; EEPROM memory cells; EMMI; HV interfaces; HV transistors; RFID application; breakdown limit; charge pumps; embedded EEPROM CMOS technology; high-programming voltages; high-voltage transistors; nanoprobing; process influences; size 0.35 mum; test structures; wafer in-line monitoring; Field effect transistors; Implants; Junctions; Layout; Reflection; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the

Conference_Location

Suzhou

ISSN

1946-1542

Print_ISBN

978-1-4799-1241-4

Type

conf

DOI

10.1109/IPFA.2013.6599237

Filename

6599237

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=633899