Channel Hot-Carrier degradation characteristics and trap activities of high-k/metal gate nMOSFETs

Author

Weichun Luo ; Hong Yang ; Wenwu Wang ; Hao Xu ; Shangqing Ren ; Bo Tang ; Zhaoyun Tang ; Jing Xu ; Jiang Yan ; Chao Zhao ; Dapeng Chen ; Ye Tianchun

Author_Institution

Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China

fYear

2013

fDate

15-19 July 2013

Firstpage

666

Lastpage

669

Abstract

In this paper, the Hot-Carrier (HC) degradation characteristics and mechanisms of nMOSFETs with high-k/metal gate (HK/MG) structure are systematically investigated. The Idsat shift under different Vd states obeys power-law of Vg stress time, and the exponent of Vg stress time shifts from 0.5~0.7 at low stress to 0.2~0.3 at high stress, which is believed to be induced by different trap activities. There are two transitions in the curve of time to fail (TTF) and Vg stress, the 1^st valley point is resulted from impact ionization, and the 2^nd transition is attributed to the dominant roles exchange of the interface trap (Nit) and bulk trap (Not) in dielectric in degradation.

Keywords

MOSFET; high-k dielectric thin films; hot carriers; impact ionisation; interface states; HK-MG structure; TTF curve; bulk trap; channel hot-carrier degradation characteristics; current shift; first valley point; high-k-metal gate nMOSFET mechanism; impact ionization; interface trap; second transition; time-to-fail curve; trap activities; voltage states; voltage stress time; Degradation; Failure analysis; Impact ionization; Integrated circuits; Stress; Substrates; Threshold voltage; CHC degradation; HK/MG; Nit; Not;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the

Conference_Location

Suzhou

ISSN

1946-1542

Print_ISBN

978-1-4799-1241-4

Type

conf

DOI

10.1109/IPFA.2013.6599248

Filename

6599248