An ultra-thin CMOS in-plane stress sensor

Author

Mahsereci, Yigit U. ; Wacker, Nicoleta ; Richter, H. ; Burghartz, Joachim N.

Author_Institution

CHIPS, Inst. fur Mikroelektron. Stuttgart, Stuttgart, Germany

fYear

2013

fDate

24-27 June 2013

Firstpage

317

Lastpage

320

Abstract

This paper presents a CMOS stress sensor for uniaxial, in-plane flex measurement. The sensor is to be fabricated as an ultra-thin chip in order to adapt to surface shape. The sensor generates 2×10-bit data from piezo-resistive elements, via on chip stress insensitive readout circuitry. Unlike the directional selectivity of the strain gauges, the uniaxial in-plane stress vector can be measured in any direction by this sensor. In addition, the MOSFET stress macro model used for the sensor flex simulations is presented. It is used for the sensor flex simulations. It supports DC, AC, and transient analysis with any analog simulator.

Keywords

CMOS integrated circuits; MOSFET; measurement systems; sensors; AC analysis; DC analysis; MOSFET stress macro model; analog simulator; chip stress insensitive readout circuitry; complementary metal oxide semiconductor stress sensor; directional selectivity; in-plane flex measurement; piezoresistive elements; sensor flex simulations; strain gauges; surface shape; transient analysis; ultra-thin CMOS in-plane stress sensor; uniaxial in-plane stress vector; uniaxial measurement; CMOS integrated circuits; MOSFET; Semiconductor device modeling; Sensors; Silicon; Stress; flexible electronics; piezo-resistive effect; stress sensor; stress simulation; ultra-thin chip;

fLanguage

English

Publisher

ieee

Conference_Titel

Ph.D. Research in Microelectronics and Electronics (PRIME), 2013 9th Conference on

Conference_Location

Villach

Print_ISBN

978-1-4673-4580-4

Type

conf

DOI

10.1109/PRIME.2013.6603172

Filename

6603172