• DocumentCode
    636108
  • Title

    DFT study of defects in graphene

  • Author

    Rani, Puja ; Bhandari, R.

  • Author_Institution
    Dept. of Phys., Panjab Univ., Chandigarh, India
  • fYear
    2013
  • fDate
    24-26 July 2013
  • Firstpage
    237
  • Lastpage
    239
  • Abstract
    Defects or imperfections in materials could be extremely useful at the nanoscale level since they could be exploited to modify the properties of nanomaterials for various practical applications. In this paper ab-initio calculations have been performed to study the stability, structural distortions and magnetism caused by defects and dopants in graphene sheet by the creation of vacancies, the inclusion of boron and nitrogen atoms and coexistence of both. All the calculations have been performed by using SIESTA (Spanish Initiative for Electronic Simulations with Thousands of Atoms) code based on density functional theory. Structural optimization shows that introducing a carbon vacancy into a graphene sheet changes the structural distribution of the neighbor atoms. In the case of coexistence of boron (nitrogen) atoms and vacancy, the modified graphene is magnetised only when B (N) atoms locate away from vacancies. These interesting results provide the possibility of tuning the properties according to application of graphene by carefully choosing the shape and size of defects.
  • Keywords
    ab initio calculations; boron; density functional theory; doping profiles; graphene; inclusions; magnetic moments; magnetisation; nanomagnetics; nanostructured materials; nitrogen; vacancies (crystal); C:B; C:N; DFT; SIESTA; Spanish Initiative for Electronic Simulations with Thousands of Atoms; ab initio calculation; boron atom inclusions; carbon vacancies; defect shape; defect size; density functional theory; dopants; graphene sheet defects; graphene-like nanomaterials; magnetic moment; magnetism; magnetization; material stability; nanomaterial properties; nanoscale level; nitrogen atom inclusions; structural distortion; structural optimization; Computational modeling; Discrete Fourier transforms; Magnetic moments; Magnetic separation; Nitrogen; Semiconductor process modeling; defects; density functional theory; doping; graphene; stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Nanomaterials and Emerging Engineering Technologies (ICANMEET), 2013 International Conference on
  • Conference_Location
    Chennai
  • Print_ISBN
    978-1-4799-1377-0
  • Type

    conf

  • DOI
    10.1109/ICANMEET.2013.6609286
  • Filename
    6609286