Unified charge model for short-channel junctionless double gate MOSFETs

A 2D physics-based model for short-channel junctionless double gate (DG) MOSFETs is presented. From a closed-form solution for the 2D potential we derive explicit equations for the calculation of threshold voltage V_T and subthreshold slope S. A unified charge model valid for all operating regimes is developed by using Lambert´s W-function, and a standard smoothing function for the transition between depletion and accumulation region. The model for the potential is derived with the help of Poisson´s equation and the conformal mapping technique by Schwarz-Christoffel. Dependencies between the physical device parameters and their impact on the device performance are worked out. A comparison of our 2D physics-based model is done versus 2D TCAD Sentaurus simulation data.