A 2.3-dB NF CMOS low voltage LNA optimized for medical applications at 600MHz

Author

Borrego, Rui ; Oliveira, Joao P. ; Goes, Johannes

Author_Institution

Dept. de Eng. Eletrotecnica e Comput., Univ. Nova de Lisboa, Caparica, Portugal

fYear

2013

fDate

20-22 June 2013

Firstpage

575

Lastpage

579

Abstract

In this paper it is presented a balun LNA, with voltage gain control that combines a common-gate and common-source stage, in which transistors biased in triode region replace the resistive loads. This last approach in conjunction with a dynamic threshold reduction technique allows a low supply voltage operation. Furthermore, a significant chip area reduction can be exploited by adopting an inductor-less configuration. Simulations results with a 130 nm CMOS technology show that the gain is up to 19.3 dB and the NF is below 2.3 dB. The total dissipation is 4 mW, leading to an FOM of 2.26 for 0.6 V supply.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; biomedical electronics; gain control; low noise amplifiers; voltage control; CMOS low-voltage LNA; CMOS technology; balun LNA; chip area reduction; common-gate stage; common-source stage; dynamic threshold reduction technique; frequency 600 MHz; inductorless configuration; low-supply voltage operation; medical application; noise figure 2.3 dB; power 4 mW; resistive load; size 130 nm; triode region; voltage 0.6 V; voltage gain control; CMOS integrated circuits; Gain; Integrated circuit modeling; Low voltage; Noise; Noise measurement; Transistors; DTMOS; balun; low power; low voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and Systems (MIXDES), 2013 Proceedings of the 20th International Conference

Conference_Location

Gdynia

Print_ISBN

978-83-63578-00-8

Type

conf

Filename

6613419