• DocumentCode
    638713
  • Title

    Epitaxial CVD growth of graphene: Growth mechanism, nanofabrication, and properties

  • Author

    Ago, Hiroki

  • Author_Institution
    Inst. for Mater. Chem. & Eng., Kyushu Univ., Fukuoka, Japan
  • fYear
    2013
  • fDate
    2-5 July 2013
  • Firstpage
    55
  • Lastpage
    58
  • Abstract
    Graphene is emerging as a new material for future applications in electronics, mechanics, optics, and energy. Recently, catalytic chemical vapor deposition (CVD) growth has attracted considerable interest as an effective means of producing large-area graphene films with relatively low cost. However, because most of the CVD growth has been done over polycrystalline metal films or foils, as-grown graphene has relatively small grain size and its orientation is not controlled. Here, I present our recent studies on our epitaxial CVD growth of graphene using the crystalline metal films deposited on sapphire c-plane and MgO substrates. The domain structure is discussed in terms of crystalline plane dependence of the catalyst Cu film. Further development of this epitaxial graphene film to fabricate nanoribbon structures as well as the catalytic growth of graphene nanoribbons is also demonstrated.
  • Keywords
    catalysis; chemical vapour deposition; epitaxial layers; graphene; nanofabrication; nanoribbons; Al2O3; C; MgO; MgO substrates; catalyst film; catalytic growth; chemical vapor deposition; crystalline metal films; crystalline plane dependence; domain structure; epitaxial CVD growth; epitaxial graphene film; graphene nanoribbons; growth mechanism; nanofabrication; nanoribbon structures; sapphire c-plane substrates; Epitaxial growth; Graphene; Mechanical factors; Metals; Substrates; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on
  • Conference_Location
    Kyoto
  • Type

    conf

  • Filename
    6617776