DocumentCode
638713
Title
Epitaxial CVD growth of graphene: Growth mechanism, nanofabrication, and properties
Author
Ago, Hiroki
Author_Institution
Inst. for Mater. Chem. & Eng., Kyushu Univ., Fukuoka, Japan
fYear
2013
fDate
2-5 July 2013
Firstpage
55
Lastpage
58
Abstract
Graphene is emerging as a new material for future applications in electronics, mechanics, optics, and energy. Recently, catalytic chemical vapor deposition (CVD) growth has attracted considerable interest as an effective means of producing large-area graphene films with relatively low cost. However, because most of the CVD growth has been done over polycrystalline metal films or foils, as-grown graphene has relatively small grain size and its orientation is not controlled. Here, I present our recent studies on our epitaxial CVD growth of graphene using the crystalline metal films deposited on sapphire c-plane and MgO substrates. The domain structure is discussed in terms of crystalline plane dependence of the catalyst Cu film. Further development of this epitaxial graphene film to fabricate nanoribbon structures as well as the catalytic growth of graphene nanoribbons is also demonstrated.
Keywords
catalysis; chemical vapour deposition; epitaxial layers; graphene; nanofabrication; nanoribbons; Al2O3; C; MgO; MgO substrates; catalyst film; catalytic growth; chemical vapor deposition; crystalline metal films; crystalline plane dependence; domain structure; epitaxial CVD growth; epitaxial graphene film; graphene nanoribbons; growth mechanism; nanofabrication; nanoribbon structures; sapphire c-plane substrates; Epitaxial growth; Graphene; Mechanical factors; Metals; Substrates; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on
Conference_Location
Kyoto
Type
conf
Filename
6617776
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