• DocumentCode
    638728
  • Title

    Reduction of hump effect of thin-film transistor by SiNx Film

  • Author

    Kobayashi, Takehiko ; Matsuo, Naoto ; Heya, Akira ; Yokoyama, Shiyoshi

  • Author_Institution
    Dept. of Mater. Sci. & Chem., Univ. of Hyogo, Himeji, Japan
  • fYear
    2013
  • fDate
    2-5 July 2013
  • Firstpage
    117
  • Lastpage
    120
  • Abstract
    The short channel effect appeared in scaled down polysilicon TFT becomes a crucial issue, as the number of the pixel increases. The influence of the very thin SiNx film which is formed at the surface of the poly-Si island on the hump effect of the scaled down polysilicon thin-film transistor (TFT) is examined. It was clarified that the SiNx film with a thickness of 1.7 nm which was formed at the interface between the poly-Si source/drain and Al electrode suppressed the hump characteristics of TFT. It is thought that the fixed charge in the SiNx film suppressed the formation of the parasitic channel in the poly-Si edge.
  • Keywords
    aluminium; electrodes; elemental semiconductors; silicon; silicon compounds; thin film transistors; thin films; SiNx-Si-Al; hump effect; poly-Si source-drain electrode; polysilicon TFT; polysilicon thin-film transistor; short channel effect; Educational institutions; Electrodes; Films; Logic gates; MOSFET; Thin film transistors; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on
  • Conference_Location
    Kyoto
  • Type

    conf

  • Filename
    6617792
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=638728