DocumentCode
642053
Title
Pulse current trimming of polysilicon piezoresistors in pressure sensor
Author
Polstyankin, Anton V. ; Gridchin, V.A.
fYear
2012
fDate
2-4 Oct. 2012
Firstpage
15
Lastpage
19
Abstract
The influence of current trimming conditions on the resistance change was researched. Current trimming method may be used for the offset reduction in pressure sensor. This method may be used after chip assembling and do not requires the use of costly equipment. Samples with different dopping concentration were researched. Their behavior during pulse current trimming was variously. The practical methodology of Wheatstone bridge balancing was offer. The qualitatively description of obtained experimental results was presented.
Keywords
assembling; piezoresistive devices; pressure sensors; pulse circuits; Wheatstone bridge balancing; chip assembling; polysilicon piezoresistors; pressure sensor; pulse current trimming; resistance change; Actuators; Bridges; Piezoresistive devices; Resistance; Resistors; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Actual Problems of Electronics Instrument Engineering (APEIE), 2012 11th International Conference on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4673-2842-5
Type
conf
DOI
10.1109/APEIE.2012.6628917
Filename
6628917
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