Design of a low noise TIA between 4.4 and 5 GHz for RoF applications on a GaAs pHEMT technology

Author

Kacou, Charles Edoua ; Polleux, Jean Luc ; Villegas, Martine ; Chretien, Gerald ; LeBorgne, Alain

Author_Institution

ESYCOM - ESIEE, Univ. Paris-Est, Paris, France

fYear

2013

fDate

2-5 Sept. 2013

Firstpage

1

Lastpage

4

Abstract

In this paper a low noise trans-impedance amplifier (TIA) is presented between 4.4 GHz and 5 GHz in a GaAs pHEMT technology using a commercial photodiode. Using a narrow-band design´s technique of photo-receiver basis on microwave approaches to design a low noise amplifier, we increase the bandwidth. The photo-receiver provides an equivalent input noise current density of 5.5 pA/VHz at 4.6 GHz.

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; integrated circuit design; low noise amplifiers; microwave amplifiers; operational amplifiers; optical receivers; GaAs; RoF applications; commercial photodiode; frequency 4.4 GHz; frequency 4.6 GHz; frequency 5 GHz; low noise TIA; low noise transimpedance amplifier; microwave approaches; narrow band design; pHEMT technology; photoreceiver basis; Bandwidth; Current density; Noise; Noise measurement; PHEMTs; Photodiodes; Topology; TIA; equivalent input current noise density; photo-receiver;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (MMS), 2013 13th Mediterranean

Conference_Location

Saida

Type

conf

DOI

10.1109/MMS.2013.6663081

Filename

6663081