• DocumentCode
    644666
  • Title

    Quantum dot terahertz emission - A study of the structures and growth conditions

  • Author

    Ngo, Chiu Y. ; Tan, T.K. ; Yoon, S.F. ; Wicaksono, Satrio ; Teng, J.H.

  • Author_Institution
    Inst. of Mater. Res. & Eng., A*STAR, Singapore, Singapore
  • fYear
    2013
  • fDate
    1-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Terahertz (THz) emission by difference frequency generation (DFG) technique has attracted vast interests recently. Quantum dot (QD) system is proposed to be the best candidate for THz emission by DFG technique due to its large optical nonlinearity. For efficient QD THz emission, the QD transition energies must lie within the THz range (0.4-41 meV). However, QD transition energies generally fall outside the critical energy difference, i.e. more than 41 meV. In this work, we investigated the effects of QD structures and growth conditions on the energy states. Consequently, we determined the required QD structures and growth conditions needed to obtain energy difference in the THz range.
  • Keywords
    optical frequency conversion; semiconductor growth; semiconductor quantum dots; terahertz wave spectra; DFG technique; QD THz emission; QD structure effects; QD transition energies; critical energy difference; difference frequency generation technique; energy states; large optical nonlinearity; quantum dot system; quantum dot terahertz emission; Atmospheric measurements; Energy measurement; Gallium arsenide; Indium gallium arsenide; Particle measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
  • Conference_Location
    Mainz
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2013.6665635
  • Filename
    6665635