DocumentCode
644666
Title
Quantum dot terahertz emission - A study of the structures and growth conditions
Author
Ngo, Chiu Y. ; Tan, T.K. ; Yoon, S.F. ; Wicaksono, Satrio ; Teng, J.H.
Author_Institution
Inst. of Mater. Res. & Eng., A*STAR, Singapore, Singapore
fYear
2013
fDate
1-6 Sept. 2013
Firstpage
1
Lastpage
2
Abstract
Terahertz (THz) emission by difference frequency generation (DFG) technique has attracted vast interests recently. Quantum dot (QD) system is proposed to be the best candidate for THz emission by DFG technique due to its large optical nonlinearity. For efficient QD THz emission, the QD transition energies must lie within the THz range (0.4-41 meV). However, QD transition energies generally fall outside the critical energy difference, i.e. more than 41 meV. In this work, we investigated the effects of QD structures and growth conditions on the energy states. Consequently, we determined the required QD structures and growth conditions needed to obtain energy difference in the THz range.
Keywords
optical frequency conversion; semiconductor growth; semiconductor quantum dots; terahertz wave spectra; DFG technique; QD THz emission; QD structure effects; QD transition energies; critical energy difference; difference frequency generation technique; energy states; large optical nonlinearity; quantum dot system; quantum dot terahertz emission; Atmospheric measurements; Energy measurement; Gallium arsenide; Indium gallium arsenide; Particle measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location
Mainz
Type
conf
DOI
10.1109/IRMMW-THz.2013.6665635
Filename
6665635
Link To Document