Ultrabroadband terahertz time domain spectroscopic ellipsometry

Author

Yamashita, Masaru ; Otani, C.

Author_Institution

Terahertz Sensing & Imaging Lab, RIKEN RAP, Sendai, Japan

fYear

2013

fDate

1-6 Sept. 2013

Firstpage

1

Lastpage

3

Abstract

We have developed an ultrabroadband terahertz time domain ellipsometry (TDSE) which covers the frequency range from 0.2 to 30 THz except for the phonon absorption band of the low temperature grown photoconductive antenna detector around 8.1 THz. The THz emitter of the system can be changed between GaP crystal from 0.1 to 7.5 THz and GaSe crystal from 9 to 30 THz. The carrier transport property of ITO thin film was characterized and well agreed with the result obtained by the measurement of the resistivity and Hall coefficient.

Keywords

III-V semiconductors; ellipsometry; gallium compounds; indium compounds; terahertz spectroscopy; terahertz wave detectors; GaP; GaSe; ITO; TDSE; carrier transport property; frequency 0.1 THz to 7.5 THz; frequency 0.2 THz to 30 THz; photoconductive antenna detector; terahertz spectroscopic ellipsometry; time domain spectroscopic ellipsometry; ultrabroadband spectroscopic ellipsometry; Conductivity; Crystals; Ellipsometry; Gases; Indium tin oxide; Optical films; Time-domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on

Conference_Location

Mainz

Type

conf

DOI

10.1109/IRMMW-THz.2013.6665764

Filename

6665764