Extra-long hole spin relaxation time in InGaAs/GaAs quantum wells probed by cyclotron resonance spectroscopy

Author

Drachenko, O. ; Kozlov, D. ; Ikonnikov, A. ; Spirin, K. ; Gavrilenko, V. ; Schneider, H. ; Helm, M. ; Wosnitza, Joachim

Author_Institution

Inst. of Ion-Beam Phys. & Mater. Res., HZDR, Dresden, Germany

fYear

2013

fDate

1-6 Sept. 2013

Firstpage

1

Lastpage

1

Abstract

We report a long, ms range, spin relaxation time of holes in InGaAs/GaAs quantum wells probed by cyclotron-resonance spectroscopy in pulsed magnetic fields up to 60 Tesla. We found a strong hysteresis in the spectral weights of the cyclotron resonance absorption when a rapidly changing magnetic field is used for the experiment, while the hysteresis vanishes when a much slower changing magnetic field is used. We attribute this behavior to a long, comparable to the magnetic-field rise time, energy relaxation time between the two lowest spin-split hole Landau levels, i.e., a long hole spin relaxation time.

Keywords

III-V semiconductors; Landau levels; carrier relaxation time; cyclotron resonance; gallium arsenide; indium compounds; magnetic field effects; semiconductor quantum wells; InGaAs-GaAs; InGaAs-GaAs quantum wells; cyclotron resonance absorption; cyclotron resonance spectroscopy; energy relaxation time; extra-long hole spin relaxation time; pulsed magnetic fields; spin-split hole Landau levels; Absorption; Coils; Hysteresis; Magnetic hysteresis; Magnetic resonance; Magnetic separation;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on

Conference_Location

Mainz

Type

conf

DOI

10.1109/IRMMW-THz.2013.6665921

Filename

6665921