DocumentCode
646778
Title
Impact of parasitic inductance on effectiveness of TVS diodes
Author
Qian Huang ; Gang Feng
Author_Institution
BlackBerry, Waterloo, ON, Canada
fYear
2013
fDate
5-9 Aug. 2013
Firstpage
677
Lastpage
681
Abstract
TVS diodes are widely used in electronic devices to protect them from ESD damages. Parasitic inductance is an important factor which circuit designers should consider in TVS diode selection and PCB routing. In this paper, the effect of the parasitic inductance associated with interconnecting traces, bonding wires and leads of TVS diodes is investigated by circuit simulations and experiments. Design suggestions are proposed for effective in-circuit ESD protection.
Keywords
electrostatic discharge; lead bonding; network routing; printed circuit design; semiconductor diodes; PCB routing; TVS diode selection; circuit simulations; effective in-circuit ESD protection; electrostatic discharge; parasitic inductance; transient voltage suppressor diodes; wires bonding; Electrostatic discharges; Generators; Inductance; Integrated circuit modeling; Semiconductor diodes; Voltage measurement; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility (EMC), 2013 IEEE International Symposium on
Conference_Location
Denver, CO
ISSN
2158-110X
Print_ISBN
978-1-4799-0408-2
Type
conf
DOI
10.1109/ISEMC.2013.6670497
Filename
6670497
Link To Document