Simulation of total dose influence on analog-digital SOI/SOS CMOS circuits with EKV-RAD macromodel

Author

Petrosyants, K.O. ; Kharitonov, I.A. ; Sambursky, L.M. ; Bogatyrev, V.N. ; Povarnitcyna, Z.M. ; Drozdenko, E.S.

Author_Institution

Moscow State Inst. of Electron. & Math. (Tech. Univ.) (MIEM), Moscow, Russia

fYear

2013

fDate

27-30 Sept. 2013

Firstpage

1

Lastpage

6

Abstract

An EKV-RAD macromodel for SOI/SOS MOSFET with account for radiation effects is developed using a subcircuit approach. As an addition to the standard version of the EKV model 1) radiation dependencies of parameters VTO, GAMMA, KP, E0 are introduced and 2) additional circuit elements to account for floating-body effects and radiation-induced leakage currents under static and dynamic radiation influence are connected. Maximum simulation error is 5-7% in the dose range up to 1 Mrad. It is shown that EKV-RAD spends less CPU time by 15-30% for analog and 40-50% for digital SOI/SOS CMOS circuits simulations compared to BSIM-SOI-RAD model.

Keywords

CMOS integrated circuits; MOSFET; silicon-on-insulator; BSIM SOI RAD model; EKV RAD macromodel; EKV model; SOI/SOS MOSFET; analog-digital SOI/SOS CMOS circuit simulations; dynamic radiation influence; floating body effects; maximum simulation error; radiation dependencies; radiation induced leakage currents; total dose influence; BSIMSOI; EKV; SOI/SOS MOSFETs; compact model; floating-body effects; kink-effect; parameter extraction; radiation effects; radiation hardness; simulation time; subcircuit approach;

fLanguage

English

Publisher

ieee

Conference_Titel

Design & Test Symposium, 2013 East-West

Conference_Location

Rostov-on-Don

Print_ISBN

978-1-4799-2095-2

Type

conf

DOI

10.1109/EWDTS.2013.6673145

Filename

6673145