• DocumentCode
    649120
  • Title

    Design of voltage reference with low sensitivity to process, supply voltage and temperature variations

  • Author

    Hande, Vinayak Gopal ; Baghini, Maryam Shojaei

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Technol. (IIT) Bombay, Mumbai, India
  • fYear
    2013
  • fDate
    4-7 Aug. 2013
  • Firstpage
    89
  • Lastpage
    92
  • Abstract
    A CMOS process-insensitive voltage reference generator, which is based on the weighted sum of thermal voltage and difference of threshold voltages, is presented. The voltage reference circuit uses high VTH and regular VTH transistors and produces reference level of 422mV. The proposed technique is analyzed theoretically and its results are compared with other methods. The circuit is designed and simulated in standard 180nm mixed mode CMOS technology for low-cost low-power applications. The circuit operates at minimum supply voltage of 1V with maximum drawn current of 577nA only. A temperature coefficient of 36ppm/°C is achieved with line sensitivity of 0.01%/V. The proposed reference generator exhibits PSRR of -60.34 dB and -37.09 dB at 100Hz and 1MHz, respectively.
  • Keywords
    CMOS integrated circuits; MOSFET; circuit simulation; integrated circuit design; low-power electronics; radiofrequency integrated circuits; reference circuits; CMOS process-insensitive voltage reference generator; PVT; current 577 nA; frequency 1 MHz; frequency 100 Hz; low-cost low-power application; mixed mode CMOS technology; noise figure -37.09 dB; noise figure -60.34 dB; process-supply voltage-temperature; regular VTH transistor; size 180 nm; thermal voltage; threshold voltage; voltage 1 V; voltage 422 mV;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on
  • Conference_Location
    Columbus, OH
  • ISSN
    1548-3746
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2013.6674592
  • Filename
    6674592