Radiation effect on standard and strained triple-gate SOI FinFETs parasitic conduction

Author

Teixeira, F.F. ; Bordallo, C.C.M. ; Silveira, M.A.G. ; Agopian, Paula G. D. ; Martino, Joao Antonio ; Simoen, Eddy ; Claeys, Cor

Author_Institution

LSI/PSI, Univ. of Sao Paulo, Sao Paulo, Brazil

fYear

2013

fDate

2-6 Sept. 2013

Firstpage

1

Lastpage

4

Abstract

In this work, the X-ray irradiation influence on the back gate conduction and its impact on the drain current characteristic of Triple-Gate SOI FinFET are investigated. The impact of X-ray irradiation was analyzed taking into consideration two different splits: unstrained and uniaxial strained devices. Comparing the p and n-channel transistors response to radiation, the influence of X-rays is more noticeable in n-channel devices due to the positive charges at the buried oxide, increasing the back gate leakage current. The opposite effect is observed in p-channel devices for which the radiation improves some devices characteristics since it makes the device more immune to the back interface conduction.

Keywords

MOSFET; leakage currents; radiation hardening (electronics); silicon-on-insulator; transistors; X-ray irradiation; back gate conduction; back gate leakage current; back interface conduction; buried oxide; drain current characteristic; n-channel transistor; p-channel transistor; parasitic conduction; radiation effect; triple-gate SOI FinFET; uniaxial strained device; Back conduction; Multiple-Gate MOSFETs (MuGFETs); X-ray radiation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics Technology and Devices (SBMicro), 2013 Symposium on

Conference_Location

Curitiba

Print_ISBN

978-1-4799-0516-4

Type

conf

DOI

10.1109/SBMicro.2013.6676144

Filename

6676144