DocumentCode
650139
Title
Non-linear behavior of Junctionless nanowire transistors operating in the linear regime
Author
Doria, R.T. ; Trevisoli, R.D. ; de Souza, M. ; Estrada, M. ; Cerdeira, Antonio ; Pavanello, Marcelo Antonio
Author_Institution
Electr. Eng. Dept., Centro Univ. da FEI, São Bernardo do Campo, Brazil
fYear
2013
fDate
2-6 Sept. 2013
Firstpage
1
Lastpage
4
Abstract
The linearity of junctionless nanowire transistors operating in the linear regime has been evaluated through experimental data and numerical simulations. The influences of the fin width, the gate bias, the temperature and the series resistance on the overall linearity have been evaluated. It is demonstrated that the increase of the series resistance improves the second order distortion and degrades the third order one.
Keywords
MOSFET; nanowires; numerical analysis; fin width; gate bias; junctionless nanowire transistors; linear regime; nonlinear behavior; numerical simulations; second order distortion; series resistance; Harmonic Distortion; Junctionless Nanowire Transistors; Linearity; Tunable Resistor;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location
Curitiba
Print_ISBN
978-1-4799-0516-4
Type
conf
DOI
10.1109/SBMicro.2013.6676171
Filename
6676171
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