A compact 60GHz power amplifier using slow-wave transmission lines in 65nm CMOS

Author

Larie, Aurelien ; Kerherve, Eric ; Martineau, Baudouin ; Belot, Didier

Author_Institution

IMS Lab., Univ. of Bordeaux, Talence, France

fYear

2013

fDate

6-8 Oct. 2013

Firstpage

61

Lastpage

64

Abstract

This paper describes a 60GHz power amplifier implemented in 7-metal-layer 65nm Low-Power (LP) CMOS process. Matching networks with slow-wave transmission-lines are used to reduce the chip size and to optimize passive component performances. For a characteristic impedance of 47 ohms, these lines reach a quality factor of 19.4, an attenuation constant and an effective permittivity of 0.74dB/mm and 7 respectively. The power amplifier achieves 13.6dBm of saturated output power, 14.5dB of power gain and 9.3% of power added efficiency for a very small active area of 0.16mm² without pads.

Keywords

CMOS integrated circuits; low-power electronics; millimetre wave power amplifiers; slow wave structures; 7-metal-layer low-power CMOS process; chip size; efficiency 9.3 percent; frequency 60 GHz; gain 14.5 dB; matching networks; passive component performances; power amplifier; resistance 47 ohm; size 65 nm; slow-wave transmission-lines; CMOS integrated circuits; Gain; Impedance; Impedance matching; Power amplifiers; Power transmission lines; Transmission line measurements; 60GHz; 65nm CMOS; compact; power amplifier; slow-wave transmission line;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6687785