133GHz CMOS power amplifier with 16dB gain and +8dBm saturated output power for multi-gigabit communication

Author

Katayama, Kengo ; Motoyoshi, Mizuki ; Takano, Kyoya ; Li Chen Yang ; Fujishima, Minoru

Author_Institution

Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan

fYear

2013

fDate

6-8 Oct. 2013

Firstpage

69

Lastpage

72

Abstract

Indoor communication is desired in CMOS millimeter-wave transceivers. To realize indoor communication, a power amplifier with a high RF output power without compromising gain, bandwidth or power efficiency is required. In this paper, a strategic design for gate width selection and matching-network optimization is introduced. A power amplifier is fabricated using a 40 nm CMOS technology process with a chip area of 0.30 mm² and a power consumption of 89.1 mW at 1.1 V DC supply. Its peak gain is 16.8 dB at 133 GHz and its 3 dB bandwidth is 13.0 GHz. Its output-referred 1 dB compression point is 6.8 dBm, its saturated output power is 8.6 dBm and its peak power added efficiency is 7.4%. The performance of this power amplifier is evaluated using an indicator and it is confirmed that it has the best performance among power amplifiers over 100 GHz.

Keywords

CMOS analogue integrated circuits; field effect MIMIC; indoor communication; millimetre wave power amplifiers; optimisation; CMOS millimeter-wave transceivers; CMOS power amplifier; CMOS technology process; efficiency 7.4 percent; frequency 133 GHz; gain 16 dB; gate width selection; indoor communication; matching-network optimization; multigigabit communication; power 89.1 mW; size 40 nm; voltage 1.1 V; Bandwidth; CMOS integrated circuits; Gain; Logic gates; Optimization; Power amplifiers; Power generation; ASK; CMOS; D-band; millimeter-wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6687787