High-speed technologies based on III-V compound semiconductors at Fraunhofer IAF

Author

Mikulla, Michael ; Leuther, A. ; Bruckner, P. ; Schwantuschke, Dirk ; Tessmann, A. ; Schlechtweg, Michael ; Ambacher, Oliver ; Caris, Michael

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany

fYear

2013

fDate

6-8 Oct. 2013

Firstpage

169

Lastpage

171

Abstract

At the Fraunhofer Institute for Applied Solid State Physics (IAF) III-V compound semiconductors are used in high speed technologies. Here we focus on GaN-based Monolithic Millimeter-Wave Integrated Circuits (MMICs) for applications in the frequency regime between 2 GHz and 100 GHz and on metamorphic HEMT based MMICs for frequencies spanning from 100 GHz up to 600 GHz. Both technologies rely on state of the art epitaxial growth of suitable HEMT structures which is also carried out at the institute. As examples for the maturity of these technologies a GaN-based two-stage power amplifier operating in V-band is described and for the metamorphic HEMT technology a 300 GHz chip set for THz imaging applications as well as a broad-band six-stage amplifier operating around 600 GHz are presented.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC; amplifiers; terahertz wave imaging; Fraunhofer IAF; Fraunhofer Institute for Applied Solid State Physics; III-V compound semiconductors; MMIC; THz imaging; broadband six-stage amplifier; high-speed technologies; metamorphic HEMT; monolithic millimeter-wave integrated circuits; Gain; Gallium nitride; Logic gates; MMICs; Radar; mHEMTs; GaN; HEMT; THz; amplifier; compound semcoductors; metamorphic;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6687812