Effect of Al Sn — Doping on properties of zinc oxide nanostructured films grown by magnetron sputtering

Author

Ghimpu, Lidia ; Tiginyanu, Ion ; Lupan, Oleg ; Mishra, Yogendra Kumar ; Paulowicz, Ingo ; Gedamu, Dawit ; Cojocaru, Ala ; Adelung, R.

Author_Institution

Lab. of Nanotechnol., Inst. of Electron. Eng. & Ind. Technol., Chisinau, Moldova

Volume

1

fYear

2013

fDate

14-16 Oct. 2013

Firstpage

133

Lastpage

136

Abstract

Metal doping in nanostructured zinc oxide is important for device applications. To obtain improved performances for practical applications, Aluminum (Al) and Tin (Sn)-doping in zinc oxide nanostructured layers were investigated. Samples were grown by magnetron sputtering and studied by X-ray diffraction (XRD), micro-Raman, scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) techniques. It was observed that nanoparticles are interconnected and form porous network of individual nanoparticles. It is found clear evidence of changes of different properties after doping with aluminum or tin in zinc oxide nanostructured films grown by magnetron sputtering.

Keywords

II-VI semiconductors; Raman spectra; X-ray chemical analysis; X-ray diffraction; aluminium; nanoparticles; nanoporous materials; porosity; scanning electron microscopy; semiconductor doping; semiconductor growth; semiconductor thin films; sputter deposition; tin; wide band gap semiconductors; zinc compounds; EDX; SEM; X-ray diffraction; XRD; ZnO:Al; ZnO:Sn; doping; energy dispersive X-ray analysis; magnetron sputtering; microRaman spectroscopy; nanoparticles; nanostructured films; porous network; scanning electron microscopy; Doping; Films; Glass; Sputtering; Substrates; Tin; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2013 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4673-5670-1

Electronic_ISBN

1545-827X

Type

conf

DOI

10.1109/SMICND.2013.6688111

Filename

6688111