DocumentCode
659052
Title
Design with FinFETs: Design rules, patterns, and variability
Author
Topaloglu, Rasit O.
Author_Institution
Semicond. R&D Center, IBM, Hopewell Junction, NY, USA
fYear
2013
fDate
18-21 Nov. 2013
Firstpage
569
Lastpage
571
Abstract
FinFETs have proven to be the device of choice for the next few technology generations. Consequently, design rules and limitations related to FinFETs need to be carefully understood. We present restricted and gridded design rules related to FinFETs. We also present results which indicate that a complete front-end-of-line (FEOL) and middle-of-line (MOL) of a memory with controllers can be designed from a fixed set of patterns. We also indicate sources of variations in FinFETs.
Keywords
MOSFET; semiconductor device manufacture; FinFET; design limitations; front-end-of-line; gridded design rules; middle-of-line; FinFETs; Industries; Layout; Lithography; Materials; Performance evaluation; Routing;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design (ICCAD), 2013 IEEE/ACM International Conference on
Conference_Location
San Jose, CA
ISSN
1092-3152
Type
conf
DOI
10.1109/ICCAD.2013.6691172
Filename
6691172
Link To Document