A novel 3D TSV transformer technology for digital isolator gate driver applications

Author

Lulu Peng ; Rongxiang Wu ; Xiangming Fang ; Toyoda, Yoshiaki ; Akahane, Masashi ; Yamaji, Masaharu ; Sumida, Hitoshi ; Sin, Johnny K. O.

Author_Institution

ECE Dept., Hong Kong Univ. of Sci. & Technol., Hong Kong, China

fYear

2013

fDate

26-30 May 2013

Firstpage

69

Lastpage

72

Abstract

In this paper, a novel 3D TSV (Through-Silicon-Via) transformer technology for power system-on-chip applications is proposed and demonstrated experimentally. The transformer used in the power system features a galvanic isolation of > 4 kV and a voltage gain of > -3 dB from 10 MHz to 100 MHz. It can be embedded in the bottom layer of a silicon substrate and sandwiched between system circuitries for ultimate area efficiency and the smallest possible form factor compared with other conventional on-silicon approaches. A digital isolator gate driver built using this transformer technology is achieved, and successful signal transfer is clearly illustrated.

Keywords

driver circuits; power integrated circuits; system-on-chip; three-dimensional integrated circuits; transformers; 3D TSV transformer technology; digital isolator gate driver; galvanic isolation; power system-on-chip; silicon substrate; through silicon via transformer technology; Coils; Isolators; Logic gates; Power transformer insulation; Q-factor; Three-dimensional displays; Through-silicon vias; 3D integration; digital isolator; monolithic transformer; system-on-chip;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on

Conference_Location

Kanazawa

ISSN

1943-653X

Print_ISBN

978-1-4673-5134-8

Type

conf

DOI

10.1109/ISPSD.2013.6694399

Filename

6694399