A novel low-side structure for OPTVLD-SPIC technologically compatible with BiCMOS

Author

Junji Cheng ; Xingbi Chen

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices of China, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2013

fDate

26-30 May 2013

Firstpage

123

Lastpage

126

Abstract

A novel low-side structure based on the optimum variation lateral doping (OPTVLD) technique, which is formed by many inner VDMOS cells combining an outermost LDMOS, is realized in the 0.8μm BiCMOS-compatible technology. With the benefit of the additional vertical cells, it presents a low specific on-resistance with high breakdown voltage, which significantly advances the prior art. Furthermore, since this low-side structure is capable of being integrated with high-side structure and circuits on a single chip, through the low-cost self-isolation (SI) technology, it is very attractive for fabricating the smart power IC (SPIC) better and cheaper.

Keywords

BiCMOS integrated circuits; power integrated circuits; semiconductor doping; BiCMOS-compatible technology; OPTVLD-SPIC technique; SI technology; SPIC; high breakdown voltage; high-side structure; low specific on-resistance; low-cost self-isolation technology; low-side structure; optimum variation lateral doping technique; size 0.8 mum; smart power IC; vertical cells; Art; BiCMOS integrated circuits; Doping; Periodic structures; Silicon; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on

Conference_Location

Kanazawa

ISSN

1943-653X

Print_ISBN

978-1-4673-5134-8

Type

conf

DOI

10.1109/ISPSD.2013.6694444

Filename

6694444