• DocumentCode
    661597
  • Title

    Interdigitated LDMOS

  • Author

    Jaejune Jang ; Kyu-Heon Cho ; Dongeun Jang ; Minhwan Kim ; Changjoon Yoon ; Junsung Park ; Hyunsil Oh ; Chiho Kim ; Hyoungsoo Ko ; Keunho Lee ; Sangbae Yi

  • Author_Institution
    Samsung Electron., Yongin, South Korea
  • fYear
    2013
  • fDate
    26-30 May 2013
  • Firstpage
    245
  • Lastpage
    248
  • Abstract
    Novel Interdigitated LDMOS is experimented resulting in best in class RSP-BVDSS performance (21.8mΩ-mm2 with BVDSS of 47V) in comparison to published LDMOS. RSP improvement is made through additional current path by removing STI region in drift area. Breakdown voltage is maintained with lateral field plate effect from side of the current path. Proposed Interdigitated LDMOS satisfies reliability criteria (HCI, snap back) as 40V device. All of this is obtained without any process change.
  • Keywords
    MOS integrated circuits; electric breakdown; integrated circuit reliability; HCI; RSP-BVDSS performance; STI region removal; breakdown voltage; interdigitated LDMOS; lateral field plate effect; reliability; voltage 40 V; voltage 47 V; Capacitance; Fingers; Human computer interaction; Logic gates; Performance evaluation; Reliability; Three-dimensional displays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
  • Conference_Location
    Kanazawa
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4673-5134-8
  • Type

    conf

  • DOI
    10.1109/ISPSD.2013.6694462
  • Filename
    6694462
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=661597