Effect of signal PAPR on efficiency of envelope tracking power amplifiers

Author

Yan, Jonmei J. ; Chan-Sei Yoo ; Trask, Elizabeth M. ; Dongsu Kim ; Asbeck, P.M.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of California, San Diego, La Jolla, CA, USA

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

860

Lastpage

862

Abstract

Although envelope tracking power amplifiers have significantly higher efficiency in back-off than constant supply Class AB amplifiers, there is nonetheless an impact of modulation peak-to-average power ratio (PAPR) on the overall system efficiency. This paper provides experimental results and analysis of efficiency of a GaN RF amplifier with peak power 100W under envelope tracking, as a function of PAPR over the range 6.5dB to 10dB. The analysis shows that the RF transistor knee voltage relative to its maximum drain voltage, and the output power of the envelope amplifier relative to its maximum output power, are major determinants of the efficiency roll-off.

Keywords

III-V semiconductors; gallium compounds; modulation; radiofrequency power amplifiers; wide band gap semiconductors; GaN; RF amplifier; RF transistor knee voltage; constant supply class AB amplifier; efficiency roll-off determinant; envelope tracking power amplifier; gain 6.5 dB to 10 dB; maximum drain voltage; modulation peak-to-average power ratio; power 100 W; signal PAPR effect; Gallium nitride; Peak to average power ratio; Power amplifiers; Power generation; Power measurement; Radio frequency; Voltage measurement; crest factor; efficiency; envelope tracking (ET); gallium nitride (GaN); peak-to-average power ratio (PAPR); power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6694958

Filename

6694958