CMOS power amplifier with temperature compensation for 79 GHz radar system

Author

Yoshida, Takafumi ; Takano, Kyoya ; Chenyang Li ; Motoyoshi, Mizuki ; Katayama, Kengo ; Amakawa, Shuhei ; Fujishima, Minoru

Author_Institution

Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

239

Lastpage

241

Abstract

We have developed a 79 GHz CMOS power amplifier (PA) with temperature compensation implemented using 40 nm CMOS technology that suppresses the variation of small-signal gain and the degradation of linearity within 0.8 dB in the temperature range from 0 to 100°C. The PA consists of an on-chip temperature sensor and four-stage common-source NMOS amplifiers. The temperature-compensated PA operating at 100°C achieved a small-signal gain of 15.7 dB, a 12 GHz bandwidth and a saturated output power (Psat) of 6.8 dBm with 96.2 mW power consumption at a supply voltage of 1.1 V.

Keywords

CMOS integrated circuits; millimetre wave integrated circuits; millimetre wave power amplifiers; millimetre wave radar; CMOS power amplifier; bandwidth 12 GHz; four-stage common-source NMOS amplifiers; frequency 79 GHz; gain 15.7 dB; on-chip temperature sensor; power 96.2 mW; radar system; size 40 nm; small-signal gain; temperature 0 C to 100 C; voltage 1.1 V; CMOS integrated circuits; Gain; Power amplifiers; Radar; Temperature; Temperature measurement; Temperature sensors; CMOS; millimeter-wave; power amplifier; temperature compensation; temperature sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6695106

Filename

6695106