DocumentCode
662652
Title
Table of contents
fYear
2013
fDate
27-29 Oct. 2013
Firstpage
1
Lastpage
7
Abstract
The following topics are dealt with: GaN devices; GaN based circuit prototyping; SiC devices; SiC based power module and integrated circuits; high performance gate drive; packaging; device testing; wide bandgap based high power circuits; gate and interface; switch applications; device evaluation and modeling; operation and reliability.
Keywords
III-V semiconductors; gallium compounds; modules; monolithic integrated circuits; power integrated circuits; power semiconductor devices; semiconductor device models; semiconductor device packaging; semiconductor device reliability; semiconductor device testing; silicon compounds; wide band gap semiconductors; GaN based circuit prototyping; GaN devices; SiC based power module; device evaluation; device modeling; device operation; device testing; high performance gate drive; integrated circuits; interface; packaging; reliability; switch applications; wide bandgap based high power circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on
Conference_Location
Columbus, OH
Type
conf
DOI
10.1109/WiPDA.2013.6695546
Filename
6695546
Link To Document