Very high performance GaN-on-GaN diodes

Author

Kizilyalli, Isik C. ; Edwards, Andrea ; Bour, David ; Shah, Hemal ; Disney, Don ; Hui Nie

Author_Institution

Avogy, Inc., San Jose, CA, USA

fYear

2013

fDate

27-29 Oct. 2013

Firstpage

1

Lastpage

5

Abstract

Vertical diodes have been fabricated on low defect density bulk GaN substrates. The devices demonstrate performance near theoretical limits for on-state resistance at a given rated breakdown voltage, based on GaN material properties. Breakdown voltage up to 3.7 kV has been measured. Measurements reveal robust avalanche breakdown, critical in an inductive circuit environment. Measurement of switching transients (5-25A) indicates the lack of minority carrier storage and low capacitances resulting in very low switching losses for the devices.

Keywords

III-V semiconductors; gallium compounds; power semiconductor diodes; semiconductor device breakdown; switching transients; wide band gap semiconductors; GaN; Vertical diodes; avalanche breakdown; breakdown voltage; capacitances; current 5 A to 25 A; inductive circuit environment; low defect density bulk GaN substrates; minority carrier storage; on-state resistance; switching losses; switching transients; very high performance GaN-on-GaN diodes; Gallium nitride; Performance evaluation; Schottky diodes; Silicon; Silicon carbide; Substrates; bulk GaN; diodes; power semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on

Conference_Location

Columbus, OH

Type

conf

DOI

10.1109/WiPDA.2013.6695550

Filename

6695550