Performance evaluation of wide bandgap semiconductor technologies in automotive applications

Author

Shamsi, Pourya ; McDonough, Matthew ; Fahimi, B.

Author_Institution

Dept. of Electr. Eng., Missouri Univ. of Sci. & Technol., Rolla, MO, USA

fYear

2013

fDate

27-29 Oct. 2013

Firstpage

115

Lastpage

118

Abstract

This paper evaluates the commercially available semiconductor switch technologies for automotive applications. For this purpose, conventional Silicon (Si) Insulated Gate Bipolar Transistor (IGBT) is compared with wide bandgap Gallium Nitride (GaN) and Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Various design aspects of commercially available wide bandgap switches are introduced. Afterwards, experimental efficiency measurements for SRM drive systems using different semiconductor technologies are performed. Methods to improve performance of the automotive drive system are introduced.

Keywords

III-V semiconductors; MOSFET; automotive electronics; bipolar transistor switches; driver circuits; elemental semiconductors; field effect transistor switches; gallium compounds; insulated gate bipolar transistors; silicon; silicon compounds; wide band gap semiconductors; GaN; GaN MOSFET; SRM drive systems; Si; Si-IGBT; SiC; SiC MOSFET; automotive applications; insulated gate bipolar transistor; metal-oxide-semiconductor field-effect transistor; performance evaluation; semiconductor switch technologies; wide bandgap semiconductor technologies; wide bandgap switches; Gallium nitride; Logic gates; MOSFET; Photonic band gap; Silicon; Silicon carbide; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on

Conference_Location

Columbus, OH

Type

conf

DOI

10.1109/WiPDA.2013.6695576

Filename

6695576