A 285 GHz sub-harmonic injection locked oscillator in 65nm CMOS technology

Author

Guerra, Jose Moron ; Siligaris, Alexandre ; Lampin, Jean-Francois ; Danneville, Frangois ; Vincent, Pierre

Author_Institution

LETI, CEA, Grenoble, France

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

A 285 GHz Sub Harmonic Injection Locked Oscillator (SHILO) is presented using a standard 65nm CMOS process. The architecture of this oscillator is based on the differential LC tank with push-push but adapted to obtain a third harmonic oscillation. The output power is -19 dBm at 285 GHz for a dc power of 70 mW. This oscillator offers a measured phase noise of -96.3 dBc/Hz at 10 MHz and -80.5 dBc/Hz at 1 MHz, and a tuning range from 284.2 GHz to 289 GHz. The SHILO can be locked all along the tuning range with an injection signal corresponding to one sixth of the output frequency. The chip size is 921×451 μm².

Keywords

CMOS integrated circuits; LC circuits; circuit tuning; injection locked oscillators; phase noise; CMOS process; CMOS technology; SHILO; dc power; differential LC tank; frequency 1 MHz; frequency 10 MHz; frequency 284.2 GHz to 289 GHz; injection signal; output frequency; output power; phase noise; power 70 mW; size 65 nm; subharmonic injection locked oscillator; third harmonic oscillation; tuning range; CMOS integrated circuits; Frequency measurement; Harmonic analysis; Impedance matching; Phase noise; Power generation; CMOS; Sub-harmonic injection-locked oscillator; THz; sub-THz;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697345

Filename

6697345