Bond-wire engineering to improve power performance in multi-cell GaN package devices

Power distribution across large multi-cell GaN packaged device studied through 3D EM simulation to show significant non-uniformity in output power, phase and temperature in unmatched standard parts. A simple technique by changing drain bond-wire lengths to equalize the phase front has been shown to improve the combining efficiency of the power cells which in turn improves gain and power performance by 10-15% at higher frequencies of 3.5GHz at 48V without sacrificing the low frequency response.