Passives design for a high performance W-band amplifier

Author

Xiaojun Bi ; Yongxin Guo ; Yong-Zhong Xiong ; Arasu, A. ; MuShui Zhang ; Minkyu Je

Author_Institution

Nat. Univ. of Singapore, Singapore, Singapore

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

A high performance W-band LNA is designed in 0.13 μm SiGe BiCMOS technology by firstly deploying SC-GCPW input matching network, shielded cascode stage and partition layout. Noise figure of the LNA, parasitic coupling of the cascode stage and reverse isolation are considerably reduced. The LNA achieved a measured gain of above 45 dB, noise figure of 7.2 dB at 95 GHz and 19 mW power consumption in 0.13 μm BiCMOS which is the state-of-the-art on silicon. This LNA performance could help the W-band total power radiometer obtain a 0.5-K NEΔT.

Keywords

BiCMOS analogue integrated circuits; coplanar waveguides; elemental semiconductors; integrated circuit layout; integrated circuit noise; low noise amplifiers; microwave amplifiers; silicon; BiCMOS technology; SC-GCPW input matching network; SiGe; W-band total power radiometer; frequency 95 GHz; gain 45 dB; high performance W-band LNA; high performance W-band amplifier; noise figure; noise figure 7.2 dB; parasitic coupling; partition layout; passives design; power 19 mW; power consumption; reverse isolation; shielded cascode stage; silicon; size 0.13 mum; CMOS integrated circuits; Couplings; Gain; Impedance matching; Noise figure; Power system stability; Cascode; Coplanar waveguide; Electromagnetic optimization; Low noise amplifier; Passives design; Shielding; SiGe BiCMOS;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697514

Filename

6697514