• DocumentCode
    664550
  • Title

    High frequency noise characterisation of graphene FET device

  • Author

    Mele, D. ; Fregonese, Sebastien ; Lepilliet, Sylvie ; Pichonat, E. ; Dambrine, Gilles ; Happy, H.

  • fYear
    2013
  • fDate
    2-7 June 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    RF GFET devices have been processed on SiC wafer using Al2O3 as a gate oxide. These devices have been characterised with DC, S parameter and high frequency noise measurement (NF50). The noise parameters have been extracted in order to evaluate the graphene material for RF applications. This GFET shows some potentialities for RF circuits with fT=11.5GHz and NFmin=2.4 dB at 3GHz.
  • Keywords
    alumina; graphene; low noise amplifiers; microwave field effect transistors; silicon compounds; wide band gap semiconductors; Al2O3; RF GFET device; RF circuit; SiC; SiC wafer; frequency 3 GHz; gate oxide; graphene FET device; graphene material; high frequency noise characterisation; high frequency noise measurement; Field effect transistors; Graphene; Logic gates; Noise; Noise measurement; Performance evaluation; Radio frequency; FET; LNA; circuit; graphene; high frequency noise; small signal model;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
  • Conference_Location
    Seattle, WA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-6177-4
  • Type

    conf

  • DOI
    10.1109/MWSYM.2013.6697561
  • Filename
    6697561
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=664550