A ring-HEMT for improved GaN MMIC thermal dissipation

Author

Darwish, Ali M. ; Hung, Hingloi Alfred ; Ibrahim, Ahmed A.

Author_Institution

American Univ. in Cairo, Cairo, Egypt

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

A novel GaN HEMT which reduces the junction temperature is presented. The new structure uses a ring-like layout for the gate stripes, aimed at increasing the separation between stripes. Simulation and experimental results indicate improved performance of the Ring-HEMT, stemming from thermal effects and their interaction with device parameters. Compared to a regular HEMT, the new HEMT showed a decrease in junction temperature of 40°C from 178 °C resulting in a significant improvement in output power, and 43× fold increase in lifetime.

Keywords

III-V semiconductors; MMIC; gallium compounds; high electron mobility transistors; microwave field effect transistors; thermal management (packaging); thermal resistance; wide band gap semiconductors; GaN; MMIC thermal dissipation; junction temperature; ring HEMT; ring like layout; temperature 40 C to 178 C; thermal effect; thermal resistance; Capacitance; Gallium nitride; HEMTs; Heating; Layout; Logic gates; Performance evaluation; FET; GaN HEMT; Junction Temperature; Reliability; Thermal Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697631

Filename

6697631