A semi-empirical large-signal compact model for RF carbon nanotube field-effect transistors

Author

Schroter, Michael ; Haferlach, Max ; Sakalas, Paulius ; Claus, Martin

Author_Institution

CEDIC, Tech. Univ. Dresden, Dresden, Germany

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

4

Abstract

A new compact large-signal model for CNTFETs is presented. The model is oriented towards practical requirements for RF analog circuit design, thus overcoming accuracy and discontinuity issues of existing models. Due to the difficulties of obtaining a compact analytical solution for the Landauer equation as well as for the injected and accumulated charge on the tube, a semi-empirical formulation for the drain current and tube charge has been developed. The complete model is scalable towards multi-tube multi-finger RF CNTFET structures and includes the effects of metallic tubes, contact resistances, parasitic capacitances, self-heating and hysteresis. Experimental verification of the model is shown based on pulsed DC and RF measurements.

Keywords

analogue integrated circuits; carbon nanotube field effect transistors; radiofrequency integrated circuits; Landauer equation; RF CNTFET structures; RF analog circuit design; RF carbon nanotube field-effect transistors; RF measurements; accumulated charge; contact resistances; hysteresis; injected charge; metallic tubes; multitube multifinger structures; parasitic capacitances; pulsed DC measurements; self-heating; semiempirical formulation; semiempirical large-signal compact model; CNTFETs; Electron tubes; Integrated circuit modeling; Mathematical model; Radio frequency; Semiconductor device modeling; CNTFET modeling; CNTFET technology; Carbon nanotube FETs; RF applications; compact modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697679

Filename

6697679