Prediction of the harmonic and intermodulation performance of graphene-based analog circuits

This paper presents a simple mathematical model for the transfer characteristic of the graphene field effect transistor (GFET). The model yields closed-form expressions for the amplitudes of the harmonic and intermodulation components of the output drain-to-source current resulting from a multisinusoidal gate-to-source input voltage. The special case of a two-tone equal-amplitude gate-to-source input voltage is considered in detail. The results show that the harmonic and intermodulation performance of the GFET is strongly dependent on the asymmetry of the transfer characteristic and the amplitudes of the input sinusoids with the second-order intermodulation component dominating over a wide range of the input voltage amplitudes and different degrees of asymmetry of the transfer characteristic.