• DocumentCode
    670667
  • Title

    Strained Si nanowire tunnel FETs and inverters

  • Author

    Zhao, Q.T. ; Knoll, Lars ; Richter, Simon ; Schmidt, Martin ; Blaeser, Sebastian ; Luong, Gia Vinh ; Wirths, Stephan ; Nichau, A. ; Schafer, Andreas ; Trellenkamp, Stefan ; Hartmann, J.-M. ; Bourdelle, Konstantin K. ; Buca, Dan ; Mantl, Siegfried

  • Author_Institution
    Peter Grunberg Inst. 9 (PGI-9/IT), Forschungszentrum Julich, Julich, Germany
  • fYear
    2013
  • fDate
    28-29 Oct. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Steep slope devices, like Tunnel FETs (TFETs), provide small subthreshold slope (SS) <;60mV/dec at 300K and low Ioff, enabling low consumptions of both dynamic and static power. Simulations of TFETs show higher (x8) performance at VDD ~ 0.3 V than MOSFETs at the same standby power and switching energy [1].
  • Keywords
    elemental semiconductors; field effect transistors; invertors; nanowires; power consumption; silicon; tunnel transistors; Si; dynamic power consumption; inverters; standby power; static power consumption; steep slope devices; strained Si nanowire tunnel FET; switching energy; temperature 300 K; Decision support systems; Field effect transistors; Inverters; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Energy Efficient Electronic Systems (E3S), 2013 Third Berkeley Symposium on
  • Conference_Location
    Berkeley, CA
  • Type

    conf

  • DOI
    10.1109/E3S.2013.6705867
  • Filename
    6705867
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=670667