10 Gb/s integrated tunable hybrid III–V/Si laser and silicon Mach-Zehnder modulator

Author

Duan, Guang-Hua ; Jany, C. ; Le Liepvre, A. ; Provost, J.-G. ; Make, Dalila ; Lelarge, F. ; Lamponi, Marco ; Poingt, F. ; Fedeli, J.-M. ; Messaoudene, S. ; Bordel, D. ; Brision, S. ; Keyvaninia, S. ; Roelkens, Gunther ; Van Thourhout, Dries ; Thomson, Dav

Author_Institution

III-V Lab., Alcatel-Thales, Palaiseau, France

fYear

2012

fDate

16-20 Sept. 2012

Firstpage

1

Lastpage

3

Abstract

We demonstrate a tunable transmitter, integrating a hybrid III-V/Si laser fabricated by wafer bonding and a silicon Mach-Zehnder modulator. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.

Keywords

III-V semiconductors; elemental semiconductors; error statistics; extinction coefficients; integrated optics; integrated optoelectronics; laser cavity resonators; laser tuning; optical fabrication; optical modulation; optical transmitters; semiconductor lasers; silicon; III-V/Si laser; Si; bit rate 10 Gbit/s; bit-error-rate performance; high extinction ratio; integrated tunable transmitter; intra-cavity ring resonator; silicon Mach-Zehnder modulator; wafer bonding; wavelength tunability; Bit error rate; Erbium; Modulation; Optical waveguides; Ring lasers; Silicon; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communications (ECOC), 2012 38th European Conference and Exhibition on

Conference_Location

Amsterdam

Type

conf

Filename

6706211