State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors

Author

Alles, Michael L. ; Schrimpf, R.D. ; Massengill, Lloyd W. ; Ball, D.R. ; Kelly, Andrew T. ; Haddad, Nadim F. ; Rodgers, John C. ; Ross, Jason F. ; Chan, Erwin Hoi Wing ; Raman, Ashok ; Turowski, Marek

Author_Institution

Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN, USA

Volume

61

Issue

6

fYear

2014

fDate

Dec. 2014

Firstpage

3068

Lastpage

3073

Abstract

A marked state dependence and significant reduction in SEU cross section with even small increases in incident angle are reported in an asymmetric RC-hardened 90 nm CMOS SRAM. The effects are attributable to the bias dependence and high aspect ratio of the deep trench capacitor sidewall depletion region, exacerbated by process-induced boron depletion. The asymmetric implementation, using capacitive hardening in only one leg of the SRAM cell, led to the appearance of the effect in experimental results.

Keywords

SRAM chips; boron; capacitors; radiation hardening (electronics); angular dependence; asymmetric RC-hardened SRAM; capacitive hardening; deep trench capacitors; process induced boron depletion; single event upsets; size 90 nm; state dependence; CMOS process; Capacitors; Doping; Radiation hardening (electronics); SRAM cells; Single event upsets; Asymmetric RC hardening; CMOS; SEU; SRAM; deep trench capacitor;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2368931

Filename

6971240