• DocumentCode
    671293
  • Title

    Design and reliability analysis of voltage reference circuit in 180 nm CMOS process

  • Author

    Takahashi, Y. ; Sato, Hikaru ; Sekine, Taku

  • Author_Institution
    Dept. of Electr., Electron. & Comput. Eng., Gifu Univ., Gifu, Japan
  • fYear
    2013
  • fDate
    22-25 Oct. 2013
  • Firstpage
    251
  • Lastpage
    254
  • Abstract
    This paper investigates the reliability of voltage reference circuit from the viewpoint of LSI layout design. In the LSI layout design, guard ring structure, voltage/ground source impedance, and location of MOS finger are very important factor, and therefore we designed two types; the one is without any consideration of layout factor, the one is considered. From the measurement results, we conduce that robust circuit requires guard ring strongly tied to ground, wide voltage/ground line, and MOS finger which is oriented in the same direction.
  • Keywords
    CMOS integrated circuits; integrated circuit design; integrated circuit reliability; large scale integration; reference circuits; CMOS process; LSI layout design; MOS finger; guard ring structure; reliability analysis; size 180 nm; voltage ground source impedance; voltage reference circuit; Capacitors; Clocks; Fingers; Large scale integration; Layout; Temperature measurement; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2013 8th International
  • Conference_Location
    Taipei
  • ISSN
    2150-5934
  • Type

    conf

  • DOI
    10.1109/IMPACT.2013.6706629
  • Filename
    6706629