DocumentCode
671293
Title
Design and reliability analysis of voltage reference circuit in 180 nm CMOS process
Author
Takahashi, Y. ; Sato, Hikaru ; Sekine, Taku
Author_Institution
Dept. of Electr., Electron. & Comput. Eng., Gifu Univ., Gifu, Japan
fYear
2013
fDate
22-25 Oct. 2013
Firstpage
251
Lastpage
254
Abstract
This paper investigates the reliability of voltage reference circuit from the viewpoint of LSI layout design. In the LSI layout design, guard ring structure, voltage/ground source impedance, and location of MOS finger are very important factor, and therefore we designed two types; the one is without any consideration of layout factor, the one is considered. From the measurement results, we conduce that robust circuit requires guard ring strongly tied to ground, wide voltage/ground line, and MOS finger which is oriented in the same direction.
Keywords
CMOS integrated circuits; integrated circuit design; integrated circuit reliability; large scale integration; reference circuits; CMOS process; LSI layout design; MOS finger; guard ring structure; reliability analysis; size 180 nm; voltage ground source impedance; voltage reference circuit; Capacitors; Clocks; Fingers; Large scale integration; Layout; Temperature measurement; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2013 8th International
Conference_Location
Taipei
ISSN
2150-5934
Type
conf
DOI
10.1109/IMPACT.2013.6706629
Filename
6706629
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