• DocumentCode
    676088
  • Title

    Artificial magnetic conductor based on InP technology

  • Author

    Yan Jun Dai ; Guo Qing Luo ; Ya Ping Liang

  • Author_Institution
    Key Lab. of RF Circuits & Syst. of Minist. of Educ., Hangzhou Dianzi Univ., Hangzhou, China
  • Volume
    02
  • fYear
    2013
  • fDate
    23-25 Oct. 2013
  • Firstpage
    1124
  • Lastpage
    1126
  • Abstract
    Artificial magnetic conductor (AMC) is a kind of periodic structures and it introduces a zero degrees reflection phase shift to incident wave. In order to reduce size of artificial magnetic conductor and increase their working bandwidth, InP process is used to design AMC in this paper. InP material has advantages of large forbidden bandwidth, high electron mobility, negative resistance effect etc. AMC based on InP process has been analyzed and results show that the proposed AMC has a good bandwidth compared with that of CMOS process for its smooth reflection phase variation and its whole size is greatly reduced.
  • Keywords
    CMOS analogue integrated circuits; III-V semiconductors; electromagnetic wave reflection; indium compounds; microwave metamaterials; periodic structures; CMOS process; artificial magnetic conductor; high-electron mobility; incident wave; indium phosphorus process; indium phosphorus technology; negative resistance effect; periodic structures; reflection phase variation; working bandwidth; zero-degree reflection phase shift; Bandwidth; CMOS integrated circuits; Conductors; Indium phosphide; Magnetoacoustic effects; Reflection coefficient; Shape; AMC; InP; reflection phase;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Antennas & Propagation (ISAP), 2013 Proceedings of the International Symposium on
  • Conference_Location
    Nanjing
  • Print_ISBN
    978-7-5641-4279-7
  • Type

    conf

  • Filename
    6717695