Characterization of semiconductor with spintronic dopant

The ability to control spin states of highly mobile electrons and the ability to turn this collective on and off states could lead to much more efficient spin transistors and other devices. In this paper the properties of cobalt doped with titanium dioxide semiconductor material has been investigated. The addition of impurity atoms into semiconducting materials is the primary method for controlling the properties of the semiconductor, such as band gap, electrical conductivity & magnetic property. This paper focuses on various aspects of properties like particle size, electrical conductivity & band gap have been explored with the help of XRD, SEM & UV. The primary interest will be on elucidating the spin property to understand the role of cobalt dopant in ferromagnetism. The report from the UV shows a low band gap which appears to be a promising property for using the material in solar cell applications.